TIM5359-45SL datasheet, fet equivalent, Toshiba Semiconductor

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･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at.

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Toshiba Semiconductor

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Toshiba (https://www.toshiba.com/) Semiconductor

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TIM5359-45SL Datasheet, Toshiba Semiconductor

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